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| Dual SCHOTTKY Barrier Diodes These SCHOTTKY barrier diodes are designed for high speed switching applications, circuit protection, and vol tage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 V @ I F = 10 mAdc Cathode 6 N/C 5 Anode 4 MBD54DWT1 30 VOLTS DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES 6 5 4 1 2 3 1 Anode 2 N/C 3 Cathode SOT-363 CASE 419B-01, STYLE 6 MAXIMUM RATINGS (T = 125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25C Derate above 25C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF Value 30 150 1.2 200 Max 125 Max -55 to +150 Unit Volts mW mW/C mA C C IF TJ T stg DEVICE MARKING MBD54DWT1 = BL ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol V (BR)R Reverse Breakdown Voltage (I R = 10 A) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (V R = 25 V) IR Forward Voltage (I F = 0.1 mAdc) VF Forward Voltage (I F = 30 mAdc) VF Forward Voltage (I F = 100 mAdc) VF Reverse Recovery Time t rr (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1 Forward Voltage (I F = 1.0 mAdc) VF Forward Voltage (I F = 10 mAdc) VF Forward Current (DC) IF Repetitive Peak Forward Current I FRM Non-Repetitive Peak Forward Current (t <1.0s) I FSM Min 30 -- -- -- -- -- -- -- -- -- -- -- Typ -- 7.6 0.5 0.22 0.41 0.52 -- 0.29 0.35 -- -- -- Max -- 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40 200 300 600 Unit Volts pF Adc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc MBD54-1/4 MBD54DWT1 Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I F ) of 10 mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10 mA. Notes: 3. t p t rr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 I F, FORWARD CURRENT (mA) I R , REVERSE CURRENT ( m A) 100 10 10 1 1.0 0.1 0.01 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.001 0 5 10 15 20 25 30 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 C T , TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance MBD54-2/4 MBD110DWT1 MBD330DWT1 MBD770DWT1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT-363 0.5 mm (min) 0.4 mm (min) 1.9 mm SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max) , the maximum rated junction temperature of the die, R qJA , the thermal resistance from the device junction to ambient, and the operating temperature, T A . Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows: P D= T J(max) - T A R JA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature T A of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. P D= 150C - 25C = 150 milliwatts 833C/W The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladE. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. 0.65 mm 0.65 mm MBD54-3/4 MBD110DWT1 MBD330DWT1 MBD770DWT1 PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-01 ISSUE G A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 6 5 4 S 1 2 3 B D 6 PL 0.2 (0.008) M B M N J C DIM A B C D G H J K N S V H K STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 MBD54-4/4 |
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